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Glossary
Body-bias
Technology for reducing current leakage by varying the voltage applied to a circuit. The substrate or body of the circuit is connected to a bias voltage to control the transistor threshold. Standby current leakage can be reduced by applying a reverse bias.
Subthreshold leakage (ISUBTH)
The current that flows between the source and drain of a transistor when the transistor is in the off state.
High-k dielectric
A material with a high dielectric constant (k, a measure of how much charge a material can hold) compared to the silicon dioxide material used in semiconductor insulating layers. Because high-k gate insulating layers have higher permittivity than silicon dioxide, they are also called high permittivity layers. High-k dielectric materials can be used in physically thick insulating layers that reduce leakage current while having an electrical thickness comparable to a thin layers of silicon dioxide. NEC Electronics uses a highly reliable HfSiOx High-k dielectric material.
GIDL (Gate Induced Drain Leakage)
A current that leaks from the drain to the substrate of a transistor. In the transistor off state, GIDL currents arise in the high electric field under the gate/drain overlap region.
