Beginning of this page
Jump to main content

Please note that JavaScript and style sheet are used in this website,
Due to unadaptability of the style sheet with the browser used in your computer, pages may not look as original.
Even in such a case, however, the contents can be used safely.

Technology > Advanced Process Technology >

Technology Trends


To provide the wide selection of options for customers, NEC Electronics is working to establish a broad spectrum of new technologies, using deep sub micron lithography advanced new materials and other revolutionary advances.


90 nm 55 nm
(65 nm half-node) 		Advantages
Device options* HP/ MP/ LP MP/ LP Best match for application requirements
Multiple-Vth** LVT/MVT/HVT LVT/MVT/HVT Optimal application performance
Triple oxide Yes Yes Lower power consumption and higher speed
Voltage (V) 1.0 (HP, MP)/1.2 (LP) 1.2 - 1.0 (variable) Optimal application performance
Gate dielectric Oxynitride High-k + oxynitride Lower power consumption (transistor)
Gate electrode CoSi/ Poly-Si NiSi/ Poly-Si Lower power consumption (transistor)
Low-k interlayer dielectric Full low-k rigid Hybrid low-k porous/ rigid Lower power consumption (interconnect) and higher speed
eDRAM Yes Yes Large-scale on-chip memory
Lithography ArF dry ArF immersion Deep sub micron feature size
Design for manufacturability Transitional Full-scale Higher yields, higher reliability

* Device options:
HP ≡ High performance
MP ≡ Medium performance
LP ≡ Low power

** Multiple-Vth (threshold voltage):
LVT ≡ Low Vth
MVT ≡ Medium Vth
HVT ≡ High Vth