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Technology > Advanced Process Technology > Embedded DRAM >

90-nm CB-90 / UX6D High-Speed / Low-Power Options


eDRAM directions

Improved performance has long been the primary benefit of embedding large amounts of DRAM in an ASIC, and high performance will continue to motivate most eDRAM users.

Beginning at the 90 nm technology node, however, eDRAM's ability to reduce power consumption becomes quite attractive for applications such as mobile phones and other handheld devices. Our low-power eDRAM helps minimize both operating and standby power, and the use of eDRAM eliminates the need to drive higher-voltage I/Os to external memory devices.

NEC Electronics further enhances this power advantage with a low-power/high-density option for 90 nm ASICs. This option still provides excellent performance – with random access speeds as high as 100 MHz – while enabling surprisingly high densities. A 15 x 15mm die can incorporate as much as 256 Mb, for example, assuming that the eDRAM occupies half the chip's area.


  • Two 90 nm eDRAM options
    • High performance
    • Low power, high density

The Proven Process

90 nm eDRAM cross section
90 nm eDRAM cross section

The use of unique materials and process steps for 90 nm eDRAM gives NEC Electronics major performance and power advantages while maintaining full CMOS compatibility. For example, our full-metal eDRAM structure uses various types of metal to reduce parasitic resistance and capacitance, thus increasing speed and reducing power consumption compared to competitors' eDRAM.

With the 90 nm eDRAM generation, NEC Electronics introduced the use of MIM2 zircon dioxide (ZrO2) dielectric capacitors the second generation of our highly successful Metal-Insulator-Metal process. Offering a high dielectric constant, low leakage and low-temperature formation, ZrO2 has proven ideal for boosting the performance of our eDRAM.

For more information on NEC Electronics eDRAM process and materials, see NEC Electronics' eDRAM process advantages.