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PRESS RELEASES (Memory)

PRESS RELEASES (Memory)
15 Feb 2006
Toshiba, NEC Electronics and Fujitsu Announce Agreement on "COSMORAM Rev. 4" Common Pseudo SRAM Specifications for Mobile Devices
8 Feb 2005
NEC Develops Breathrough Ultra-High-Speed Memory Technology That Solves Scaling Pace Limit in Embedded Memory Design
8 Nov 2004
NEC Electronics Introduces Industry's First Pseudo Static Random Access Memory (PSRAM) Device Standardized for COSMORAM Rev.3
8 Sep 2004
NEC Electronics Announces New Memory Buffer
6 Sep 2004
Toshiba, NEC Electronics, and Fujitsu Agree on "COSMORAM Rev.3" Common Specifications for PSRAM
31 Mar 2003
QDR CoDevelopment Team Reaffirms Commitment to QDR Architecture
25 Mar 2003
NEC Electronics Receives Intel's Prestigious SCQI Award
17 Feb 2003
NEC Electronics, Fujitsu and Toshiba agreed on common Pseudo SRAM user interface
6 Jan 2003
Start Sampling of 256M NOR-type Flash Memory
18 Sep 2002
NEC to Begin Sampling High-Density Late-Write SRAM with Fast Access Speeds
-New Late-Write SRAM Products Set New Standards for Performance and Memory Density-
26 Aug 2002
NEC Introduces High-Performance, Low-Power Embedded DRAM for SoC Design
-Standard CMOS-Compatible Embedded DRAM Process Enables Easy Integration of Hard Cores or Soft Macros-
15 Apr 2002
NEC Ships QDR II/DDR II Family of High-Speed SRAM Products
14 Mar 2002
Fujitsu, NEC and Toshiba Agree on Common Specifications for Next-Generation Pseudo SRAM User Interface for Mobile Applications
22 Jan 2002
NEC Develops World's Fastest 64M-bit Low Power Memory Specified for Mobile Applications
15 Oct 2001
QDRTMII and DDRII SRAM Specifications Now Public
- Comprehensive QDRTM SRAM Family Targets Network Switches, Routers -
3 Sep 2001
NEC Develops 64Mb Dual-Operation Flash Memory for Ultra-Low-Power Mobile Applications
-Achieving Top Class Ultra-Low-Power Operation Voltage-
29 Aug 2001
NEC Develops Low-power, Stacked Multi-Chip Package High-density RAM
-Set to advance the new wave of multi-functional cellular and PHS phones-
29 Jan 2001
NEC joins QDRTM SRAM Co-Development Team to produce Quad Data Rate SRAMs
24 Aug 2000
NEC Develops World's First Low Power Memory Specified for Mobile Applications
8 Feb 2000
NEC Develops Low-Cost, High-Speed 16Mbit Four-Transistor SRAM Macro For System-on-a-Chip Applications
31 Jan 2000
NEC'S MEMORY DIVISION LICENSES MOSYS' 1T-SRAMTM TECHNOLOGY FOR HIGH-DENSITY APPLICATION-SPECIFIC MEMORIES
- Patented 1T-SRAM technology delivers SRAM (sub. 10nsec. random access) performance at DRAM density -
17 Jan 2000
MULTIPLE COMPANIES AGREE TO DEVELOP ADVANCED DRAM TECHNOLOGY
24 Oct 1999
NEC TO USE MOSYS' EMBEDDED 1T-SRAMTM TECHNOLOGY AT WORLD-LEADING PLANT FOR NEW NINTENDO GAME CONSOLE
5 Oct 1998
NEC, ALi, SiS and VIA Push PC Memory Bandwidth Over 1 GB/s
7 July 1998
NEC Announces 250MHz, High Speed 2Mb Synchronous SRAM
18 Nov 1997
NEC Dramatically Improves Computer Performance with New Memory Technology
6 Feb 1997
NEC Succeeds in the World-Leading Development of a 4 Gbit DRAM
16 Dec 1996
Release of 4M-Bit Bi CMOS Synchronous SRAM for Cash-Memory Use
27 June 1996
Release of CMOS-based World-Fastest 1M-bit Synchronous SRAM
12 June 1996
Release of 32M-bit Mask ROM World's Highest-speed operation at Low Voltage


 
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