NEC Electronics and NEC Corporation Announce Design Sequence to Optimize Multi-level Interconnects for Applications Using 45-nanometer CMOS Process Technology

NEC Electronics Corporation and NEC Corporation today announced the development of an application specific interconnect structure (ASIS) that enables fine tuning of the multi-layer interconnect structure for the various applications in 45 nanometer (nm) CMOS process generation. The companies also verified that by using this technology, the optimal interconnect structure can be deduced for applications with requirements for high-speed operation, low power consumption, and high reliability.

ASIS can determine the most suitable interconnect structure, such as the combination of local, semi-global and global layers, and metal thicknesses and compositions based on considerations of product requirements. This technology includes the design sequence of optimizing relatively short interconnects within macro-cells as well as relatively long interconnects between macro-cells, taking into account the optimal insertion of buffer transistors, called "repeaters," into the long interconnects.

By applying this technology to 45nm technology-node interconnects for specific applications, the following observations were reached:

Extremely high electromigration tolerance is achieved by applying copper-aluminum (CuAl) alloy or cobalt-tungsten-phosphide (CoWP) cap-metal.

Implementing this technology would allow optimization of interconnect structures for various applications in 45nm CMOS process technology, such as high-end microprocessors (MPUs) used in high-performance servers, low-power consumption system-on-chips (SoCs) for mobile phones, and high reliability LSIs for automotive applications.

CMOS logic has been used in a wide range of applications, ranging from high-end microprocessors to mobile phones, digital consumer electronics, and automotive electronics and control units. Through the 65nm node, the same interconnects, dielectric materials, and interconnect specifications (height and width) were used. However, from the 45nm node, with greater interconnect resistance due to miniaturization and to match with greater diversity of transistor characteristics, it becomes increasingly necessary to optimize interconnect structures for various applications.

To address these issues, NEC Electronics and NEC developed ASIS and verified its effectiveness in optimizing interconnect features for various applications. The two companies believe the new technology will facilitate optimal LSI designs for a variety of application segments, and plan to implement this technology in the near future.

NEC Electronics and NEC presented their research on ASIS at the International Electron Devices Meeting (IEDM) running from December 5-7 in Washington D.C.

About NEC Electronics

NEC Electronics Corporation (TSE: 6723) specializes in semiconductor products encompassing advanced technology solutions for the high-end computing and broadband networking markets, system solutions for the mobile handsets, PC peripherals, automotive and digital consumer markets, and platform solutions for a wide range of customer applications. NEC Electronics Corporation has 26 subsidiaries worldwide including NEC Electronics America, Inc. and NEC Electronics (Europe) GmbH. Additional information about NEC Electronics worldwide can be found at www.necel.com.

About NEC Corporation

NEC Corporation (NASDAQ: NIPNY) (FTSE: 6701q.l) is one of the world's leading providers of Internet, broadband network and enterprise business solutions dedicated to meeting the specialized needs of its diverse and global base of customers. Ranked as one of the world's top patent-producing companies, NEC delivers tailored solutions in the key fields of computer, networking and electron devices, by integrating its technical strengths in IT and Networks, and by providing advanced semiconductor solutions through NEC Electronics Corporation. The NEC Group employs more than 140,000 people worldwide and had net sales of 4,855 billion yen (approx. $45.4 billion) in the fiscal year ended March 2005.
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