Main specifications of the NOR-type 256M-bit Flash memory
| Product name |
µPD29F256115 |
µPD29F256415 |
| -ExxX |
-EBxxX |
-ExxX |
-EBxxX |
| Design process |
0.15µm CMOS process |
| Organization |
Word |
16M-Word X 16-bit |
8M-Word X 32-bit
/16M-Word X 16-bit |
| Bank |
4-Bank (Dual Operation)
32M-bit + 96M-bit + 96M-bit + 32M-bit |
| Sector |
270-Sector |
8K-Word X 16-Sector
64K-Word X 254-Sector |
8K-Word/4K-Doble Word X 16-Sector
64K-Word / 32K-Doble Word X 254-Sector |
| Operation Voltage |
Vcc (core circuits) |
1.8V +/- 0.15V |
| VccQ (I/O Circuits) |
- |
3.0V +/- 0.3V |
- |
3.0V +/- 0.3V |
| Read access time |
Address access time |
85ns |
| Page address access time |
25ns |
| Power supply current |
Read |
25mA |
| Write/Erase |
35mA |
| Standby |
25µA |
| Program/Erase cycles |
100,000 cycles |
| Package |
64-ball Tape FBGA (11mm X 9mm)
/ Stacked Multi Chip packages |
Stacked Multi Chip packages |
| Availability |
ES |
November, 2002 |
March, 2003 |
November, 2002 |
March, 2003 |
| MP |
April, 2003 |
July, 2003 |
April, 2003 |
July, 2003 |
|
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