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New Products
Switch Series for Mobile and Wireless Communications
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6SMM
(TB)
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6L2MM(1511)
(TK)
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6TSON
(T5N)
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6TSSON
(T5K/T6R)
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Switch Matrix Series for LNB
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| We have a full lineup of switch matrices for the direct broadcast satellite reception LNB, so users can freely select as their system designs require. |
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| 4 x 2 switch matrix: |
Click on the product type to view a list of products. |
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Top Bottom
20-pin QFN
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Features |
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- High isolation
- Low insertion loss
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Applications |
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- Direct broadcast satellite reception LNB
- Switch boxes
- 4 x 2 switch matrix for other L and S band applications
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LNA series for GPS applications and mobile terminals
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We have a full lineup of amplifiers for GPS applications and mobile terminals. We have achieved discrete transistors and ICs with excellent low-noise and high-gain features using GaAs and our unique silicon-germanium (SiGe) bipolar process, allowing users to select the appropriate device for their system design. |
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Features
- Lineup of low-noise and high-gain devices using GaAs and SiGe(Product List)
- Lineup of the most appropriate high-density mounting packages
- Can be used as a kit with RF-IC for GPS applications
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6-pin lead-less minimold (1511) for silicon MMIC
1 mm graduations
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Top Bottom
8-pin leadless minimold |
Top Bottom
12-pin QFN |
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Wide Band Amp. IC Series
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6-pin super minimold
1 mm graduations
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6-pin leadless minimold (1511) for silicon MMIC
1 mm graduations |
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High-Output Silicon LDMOS FET Discrete Transistor
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NE55410GR |
Click the part number to view a list of products. |
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10 W Amplification Si LDMOS FET NE55410GR |
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16-pin HTSSOP |
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Product Outline
The NE55410GR includes two N-channel LD (Laterally Diffused) MOS FET elements developed for VHF to S band driver stage power amplification, and is ideally suited for use in mobile communication base station PAs and other such applications. |
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Features |
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- Single power supply: VDS=3V<VDS<30V
- 2W(Q1)&10W(Q2) twin FET
- High output: Po(1dB)=+40.4dBm TYP.(*)
- High gain: GL(Q1+Q2)=24.5dB TYP.(*)
- High efficiency: Drain efficiency=45% TYP.(*)
- Low distortion: IM3=40dBc TYP.@Pout=33dBm(*)
(*): VDS=28V, IDset=120mA, f=2.14GHz
- 16-pin HTSSOP package
(Dimensions: 6.4 x 6.5 x 0.9 mm)
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uPC8178TK and uPC8179TK: Silicon high-frequency amplifier ICs employing small package
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6-pin lead-less minimold (1511) for silicon MMIC
1 mm graduations |
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Product Outline
The uPC8178TK and uPC8179TK are silicon high-frequency amplifier ICs developed for use as buffer amplifiers for mobile communication. These ICs realize a mounting area close to half that of our conventional super minimold package products thanks to the employment of a leadless minimold package. The ICs are ideal for RF local buffers and various modules in mobile communication applications. |
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Features |
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- Leadless minimold package
(Dimensions: 1.5 x 1.3 x 0.55 mm)
- Two types of products available with different characteristics:
uPC8178TK: Low current consumption type
uPC8179TK: High gain, high isolation type
Click the part number to view a list of products. |
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