New Products

SiGe HBT Discrete Transistor

Switch Series for Mobile and Wireless Communications

Switch Matrix Series for LNB

LNA Series for GPS Applications and Mobile Terminals

Wide Band Amp. IC Series

High-Output Silicon LDMOS FET Discrete Transistor

Silicon High-frequency Amplifier ICs Employing Small Package

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SiGe HBT Discrete Transistor

The NESG2200xx,NESG2400xx is a suitable for Low Noise Amplifiers for Digital TV or Power splitter with low distortion and low NF.

Application : Digital TV tuners, SetTop BOX, Booster amplifiers for Digital TV etc.

 

Name	Recommendation
NESG210833 NESG220033 NESG220034 NESG240033 NESG240034	It is suitable for high gain LNA.
	Standard Product.
	It is suitable for low distortion LNA.

Features	Vce=5V NF = 0.9dB Vce=5v,Ic=40mA.f=1GHz Built in a ESD Protection device( HBM 3500V, MM 150V ) Low Distortion:OIP3=35.5dBm TYP:Vce=5V, Ic(set)=40mA, f=1GHz It is possible to choose from 2 kinds of package.

Package

	3pin SMM (package Code :33, SOT-23)
	3pin PoMM (package Code:34, SOT-89)

Switch Series for Mobile and Wireless Communications

We have a full lineup of switches for mobile telecommunications operating in the 500 MHz to 5.8 GHz bands, as well as for wireless LANs and other wireless communication systems. Our products are sorted by package, frequency, and type, so users can freely select as their system designs require.

• SPDT(Single Pole Double Throw)/Single Control
• SPDT(Single Pole Double Throw)/2 Control
• SPDT(Single Pole Double Throw)/Small Package
• SP3T(Single Pole Three Throw)
• DPDT(Double Pole Double Throw)

Package

6SMM (TB) 2.0×1.3×0.9

6L2MM(1511) (TK) 1.5×1.1×0.6

6TSON (T5N) 1.5×1.5×0.4

6TSSON (T5K/T6R) 1.0×1.0×0.4

Switch Matrix Series for LNB

We have a full lineup of switch matrices for the direct broadcast satellite reception LNB, so users can freely select as their system designs require.

4 x 2 switch matrix

Features	High isolation Low insertion loss
Applications	Direct broadcast satellite reception LNB Switch boxes 4 x 2 switch matrix for other L and S band application

Package

	20-pin QFN

LNA Series for GPS Applications and Mobile Terminals

We have a full lineup of amplifiers for GPS applications and mobile terminals. We have achieved discrete transistors and ICs with excellent low-noise and high-gain features using GaAs and our unique silicon-germanium (SiGe) bipolar process, allowing users to select the appropriate device for their system design.

Features	Lineup of low-noise and high-gain devices using GaAs and SiGe (Product List) Lineup of the most appropriate high-density mounting packages Can be used as a kit with RF-IC for GPS applications

package

	6-pin lead-less minimold (1511) for silicon MMIC 1 mm graduations
	8-pin leadless minimold
	12-pin QFN

Wide Band Amp. IC Series

We have a full lineup of wide band amplifiers for direct broadcast satellite and mobile telecommunications. Our products are sorted by supply voltage, output power, and package, so users can freely select as their system designs require.

• 5 V Wide Band Amp.
• 5 V Medium Output Power Amp.
• 3 V Buffer Amp.
• 3 V Medium Output Power Amp.

package

	6-pin super minimold 1 mm graduations		6-pin leadless minimold (1511) for silicon MMIC 1 mm graduations

High-Output Silicon LDMOS FET Discrete Transistor

The NE55410GR includes two N-channel LD (Laterally Diffused) MOS FET elements developed for VHF to S band driver stage power amplification, and is ideally suited for use in mobile communication base station PAs and other such applications.

NE55410GR

Features	Single power supply: VDS=3V<VDS<30V 2W(Q1)&10W(Q2) twin FET High output: Po(1dB)=+40.4dBm TYP.(*) High gain: GL(Q1+Q2)=24.5dB TYP.(*) High efficiency: Drain efficiency=45% TYP.(*) Low distortion: IM3=40dBc TYP.@Pout=33dBm(*) (*): VDS=28V, IDset=120mA, f=2.14GHz 16-pin HTSSOP package (Dimensions: 6.4 x 6.5 x 0.9 mm)

Package

	16-pin HTSSOP

uPC8178TK and uPC8179TK: Silicon high-frequency amplifier ICs employing small package

The uPC8178TK and uPC8179TK are silicon high-frequency amplifier ICs developed for use as buffer amplifiers for mobile communication. These ICs realize a mounting area close to half that of our conventional super minimold package products thanks to the employment of a leadless minimold package. The ICs are ideal for RF local buffers and various modules in mobile communication applications.

Features	Leadless minimold package (Dimensions: 1.5 x 1.3 x 0.55 mm) Two types of products available with different characteristics: uPC8178TK : Low current consumption type uPC8179TK : High gain, high isolation type

Package

	6-pin lead-less minimold (1511) for silicon MMIC 1 mm graduations

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