Contact information for inquiries, listed at the end of each document (for example, data sheets), may not be the latest.here
SPICE parameters:
S-parameters:
for Agilent ADS:
for Ansoft Designer:
for AWR Microwave Office:
Part Number
Application
Device Parameters
Voltage
Current
Frequency
Performances
PKG
S-Para
SPICE
Design Kit
Symbol
CAD Data
2SC5288 (NE68939) General Purpose, Medium Power Bip. Tr.
-
-
3.6
Icq=1
1900
Pin(1dB)=24dBm (class AB) 4MM
2SC5289 (NE69039) General Purpose, Medium Power Bip. Tr.
-
-
3.6
Icq=1
1900
Pin(1dB)=27dBm (class AB) 4MM
2SC5750 (NE67718) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr.
-
-
2.8
Icq=8
1800
P-1=15dBm 4SMM
2SC5751 (NE677M04) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr.
2.8
Icq=8
1800
P-1=15dBm F4TSMM
2SC5752 (NE67818) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr.
-
-
2.8
Icq=10
1800
P-1=18dBm 4SMM
2SC5753 (NE678M04) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr.
2.8
Icq=10
1800
P-1=18dBm F4TSMM
2SC5754 (NE664M04) Bluetooth(TM), Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr.
-
3.6
Icq=4
1800
P-1=26dBm F4TSMM
NE5500134 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
4.8
IDset=200
450-2500
Pout=29.5dBm, GL=13.0dB, Efficiency=55%@f=1.9GHz 3PMM
NE5500179A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
4.8
340
450-2500
Pout=30.0dBm, GL=14.0dB, Efficiency=55%@f=1.9GHz 79A
NE5500234 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
6
610
450-2500
Pout=32.5dBm, GL=11.0dB, Efficiency=50%@f=1.9GHz 3PMM
NE5500434 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
4.8
IDset=600
450-2500
Pout=35.0dBm, GL=14.0dB, Efficiency=60%@f=900MHz 3PMM
NE5500479A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
3.5
600
450-2500
Pout=31.5dBm, GL=15.0dB, Efficiency=62%@f=900MHz 79A
NE5510279A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
4.8
1000
450-2500
Pout=35.5dBm, GL=16.0dB, Efficiency=65%@f=900MHz 79A
NE5511279A General Purpose, Medium Power Bip. Tr.
-
-
7.5
IDset=400
460-900
Pout=40.5dBm, GL=18.5dB, Efficiency=50%@f=460MHz 79A
NE5520279A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
3.2
800
450-2500
Pout=32.0dBm, GL=10dB, Efficiency=45%@f=1.8GHz 79A
NE5520379A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET
-
-
3.2
1000
450-2500
Pout=35.5dBm, GL=16dB, Efficiency=68%@f=915MHz 79A
NE552R479A L, S-Band Power Amp., Power MOS FET
-
-
3.0
230
2450
Pout=26.0dBm, GL=11dB, Efficiency=45%@f=2.45GHz 79A
NE552R679A UHF-Band Power Amp., Power MOS FET
-
-
3.0
320
460
Pout=28.0dBm, GL=20dB, Efficiency=60%@f=460MHz 79A
NE5531079A UHF-Band Power Amp., Power LDMOS FET
-
-
-
-
7.5
IDset=200
460
Pout=40.0dBm (TYP.)@Vds=7.5V, f=460MHz, Pin=25dBm 79A
NE55410GR UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=120
960
Po(1dB)=41.5dBm@f=960MHz, Vds=28V, GL=30dB@f=900MHz 16HTSSOP
NEM090303M-28 UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=250
960
Pout=46.5dBm, GL=20dB, Efficiency=62%@f=960MHz 3M(T-91M) -
-
NEM090603M-28 UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=550
960
Po(1dB)=48.5dBm, GL=17.5dB, Efficiency=54%@f=960MHz 3M(T-91M) -
-
NEM090853P-28 UHF-Band Power Amp., Power LDMOS FET
-
-
-
-
-
28
IDset=800
960
P-1=50dBm, GL=19dB, Efficiency=54%@f=960MHz 3P(T-97M) -
-
NEM091203P-28 UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=1200
960
Pout=51.3dBm, GL=18dB, Efficiency=58%@f=960MHz 3P(T-97M) -
-
NEM091603P-28 UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=1200
880
Pout=52.3dBm, GL=19.5dB, Efficiency=60%@f=880MHz 3P(T-97M) -
-
NEM091803S-28 UHF-Band Power Amp., Power LDMOS FET
-
-
28
IDset=1600
880
Pout=52.5dBm, GL=18.5dB, Efficiency=53%@f=880MHz T-101M (3S) -
-
NESG250134 VHF-Band Power Bip. Tr., FRS, Mobile Comm., SiGeHBT
-
-
3.6
Ic(set)=30
460
Po(1dB)=+29dBm@f=460MHz, Vce=3.6V, GL=19dB@f=460MHz 3PMM
NESG260234 UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT
-
-
6
Ic(set)=30
460
Po(1dB)=+30dBm@f=460MHz, Vce=6V, GL=22dB@f=460MHz 3PMM
NESG270034 UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT
-
-
6
Ic(set)=30
460
Po=33.5dBm, Vce=6V, GL=19.5dB@f=460MHz 3PMM
Japan
