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Products > RF and Microwave Devices > Products List > Discrete >

Power Tr./FET


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  SPICE parameters: BJT S-parameters: S2P
for Agilent ADS: ADS for Ansoft Designer: DESIGNER for AWR Microwave Office: MWO
      More info.
Part Number Application Device Parameters Voltage
(V)		 Current
(mA)		 Frequency
(MHz)		 Performances PKG
S-Para SPICE Design Kit Symbol CAD Data
S2P BJT ADS DESIGNER MWO
2SC5288 (NE68939) General Purpose, Medium Power Bip. Tr. S2P - - - MWO 3.6 Icq=1 1900 Pin(1dB)=24dBm (class AB) 4MM DXF1 PDF1
2SC5289 (NE69039) General Purpose, Medium Power Bip. Tr. S2P - - - MWO 3.6 Icq=1 1900 Pin(1dB)=27dBm (class AB) 4MM DXF1 PDF1
2SC5750 (NE67718) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. S2P - - DESIGNER MWO 2.8 Icq=8 1800 P-1=15dBm 4SMM DXF1 PDF1
2SC5751 (NE677M04) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. S2P BJT ADS DESIGNER MWO 2.8 Icq=8 1800 P-1=15dBm F4TSMM DXF1

DXF2		 PDF1

PDF2
2SC5752 (NE67818) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. S2P - - DESIGNER MWO 2.8 Icq=10 1800 P-1=18dBm 4SMM DXF1 PDF1
2SC5753 (NE678M04) Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. S2P BJT ADS DESIGNER MWO 2.8 Icq=10 1800 P-1=18dBm F4TSMM DXF1

DXF2		 PDF1

PDF2
2SC5754 (NE664M04) Bluetooth(TM), Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. S2P BJT - - MWO 3.6 Icq=4 1800 P-1=26dBm F4TSMM DXF1

DXF2		 PDF1

PDF2
NE5500134 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - - MWO 4.8 IDset=200 450-2500 Pout=29.5dBm, GL=13.0dB, Efficiency=55%@f=1.9GHz 3PMM DXF1 PDF1
NE5500179A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - DESIGNER MWO 4.8 340 450-2500 Pout=30.0dBm, GL=14.0dB, Efficiency=55%@f=1.9GHz 79A DXF1 PDF1
NE5500234 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - - MWO 6 610 450-2500 Pout=32.5dBm, GL=11.0dB, Efficiency=50%@f=1.9GHz 3PMM DXF1 PDF1
NE5500434 Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - - MWO 4.8 IDset=600 450-2500 Pout=35.0dBm, GL=14.0dB, Efficiency=60%@f=900MHz 3PMM DXF1 PDF1
NE5500479A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - DESIGNER MWO 3.5 600 450-2500 Pout=31.5dBm, GL=15.0dB, Efficiency=62%@f=900MHz 79A DXF1 PDF1
NE5510279A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - DESIGNER MWO 4.8 1000 450-2500 Pout=35.5dBm, GL=16.0dB, Efficiency=65%@f=900MHz 79A DXF1 PDF1
NE5511279A General Purpose, Medium Power Bip. Tr. S2P - - DESIGNER MWO 7.5 IDset=400 460-900 Pout=40.5dBm, GL=18.5dB, Efficiency=50%@f=460MHz 79A DXF1 PDF1
NE5520279A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - DESIGNER MWO 3.2 800 450-2500 Pout=32.0dBm, GL=10dB, Efficiency=45%@f=1.8GHz 79A DXF1 PDF1
NE5520379A Mobile Comm., PDC, GSM, Power Amp., Power MOS FET S2P - - DESIGNER MWO 3.2 1000 450-2500 Pout=35.5dBm, GL=16dB, Efficiency=68%@f=915MHz 79A DXF1 PDF1
NE552R479A L, S-Band Power Amp., Power MOS FET S2P - - DESIGNER MWO 3.0 230 2450 Pout=26.0dBm, GL=11dB, Efficiency=45%@f=2.45GHz 79A DXF1 PDF1
NE552R679A UHF-Band Power Amp., Power MOS FET S2P - - DESIGNER MWO 3.0 320 460 Pout=28.0dBm, GL=20dB, Efficiency=60%@f=460MHz 79A DXF1 PDF1
NE55410GR UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=120 960 Po(1dB)=41.5dBm@f=960MHz, Vds=28V, GL=30dB@f=900MHz 16HTSSOP DXF1 PDF1
NE6500179A L, S-Band Power Amp., Power GaAs FET S2P - - DESIGNER MWO 6 200 800-2500 Po(1dB)=30dBm, GL=12dB, Efficiency=50%@f=1.9GHz 79A DXF1 PDF1
NE650103M L, S-Band Power Amp., Power GaAs FET S2P - - DESIGNER MWO 10 IDset=1500 800-2500 Po(1dB)=40dBm, GL=11dB, Efficiency=45%@f=2.3GHz 3M(T-91M) - -
NE6510179A L-Band Power Amp., Power GaAs HJ-FET S2P - - DESIGNER MWO 3.5 200 800-2500 Po=32.5dBm, GL=10dB, Efficiency=58%@f=1.9GHz 79A DXF1 PDF1
NE651R479A L-Band Power Amp., Power GaAs FET S2P - - DESIGNER MWO 3.5 50 800-2500 Po=27dBm, GL=12dB, Efficiency=60%@f=1.9GHz 79A DXF1 PDF1
NEM090303M-28 UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=250 960 Pout=46.5dBm, GL=20dB, Efficiency=62%@f=960MHz 3M(T-91M) - -
NEM090603M-28 UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=550 960 Po(1dB)=48.5dBm, GL=17.5dB, Efficiency=54%@f=960MHz 3M(T-91M) - -
NEM090853P-28 UHF-Band Power Amp., Power LDMOS FET - - - - - 28 IDset=800 960 P-1=50dBm, GL=19dB, Efficiency=54%@f=960MHz 3P(T-97M) - -
NEM091203P-28 UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=1200 960 Pout=51.3dBm, GL=18dB, Efficiency=58%@f=960MHz 3P(T-97M) - -
NEM091603P-28 UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=1200 880 Pout=52.3dBm, GL=19.5dB, Efficiency=60%@f=880MHz 3P(T-97M) - -
NEM091803S-28 UHF-Band Power Amp., Power LDMOS FET S2P - - - MWO 28 IDset=1600 880 Pout=52.5dBm, GL=18.5dB, Efficiency=53%@f=880MHz T-101M (3S) - -
NESG260234 UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT S2P - - - MWO 6 Ic(set)=30 460 Po(1dB)=+30dBm@f=460MHz, Vce=6V, GL=22dB@f=460MHz 3PMM DXF1 PDF1
NESG270034 UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT S2P - - - MWO 6 Ic(set)=30 460 Po=33.5dBm, Vce=6V, GL=19.5dB@f=460MHz 3PMM DXF1 PDF1
31 Records