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Products > Memory > Product Lineup > Static RAM (SRAM) > QDR II SRAM >

QDR™II SRAM 18M bit

(Operating ambient temperature: Commercial TA=0 to +70°C),
(Operating ambient temperature: Industrial TA= -40 to +85°C)


18M bits (2M words x 8 bits organization)

Part Number*1 Speed
Grade 		Clock
Frequency
(MHz) 		Supply Voltage
(V) 		Package Remark Data
Sheet
0 to
+70°C 		-40 to
+85°C 		Chip I/O*2
µPD44165082 E50 -- 200 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(309KB)
E60 -- 167
E75 -- 133
µPD44165082A E40 E40Y 250 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(378KB)
E50 E50Y 200
µPD44165084 E40 -- 250 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(311KB)
E50 -- 200
E60 -- 167
µPD44165084A E33 -- 300 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(389KB)
-- E37Y 270
E40 E40Y 250
E50 E50Y 200


Note(*)

  1. µPD44165xx2A and µPD44165xx4A are upward compatible with µPD44165xx2 and µPD44165xx4, respectively. µPD44165xx2A and µPD44165xx4A are recommended for new designs. These products are planned to be consolidated to µPD44165xx2A and µPD44165xx4A.
  2. During normal operation, the supply voltage of I/O must not exceed that of Chip.


18M bits (2M words x 9 bits organization)

Part Number Speed
Grade 		Clock
Frequency
(MHz) 		Supply Voltage
(V) 		Package Remark Data
Sheet
0 to
+70°C 		-40 to
+85°C 		Chip I/O*1
µPD44165092A E40 E40Y 250 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(378KB)
E50 E50Y 200
µPD44165094A E33 -- 300 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(389KB)
-- E37Y 270
E40 E40Y 250
E50 E50Y 200


Note(*)

  1. During normal operation, the supply voltage of I/O must not exceed that of Chip.


18M bits (1M words x 18 bits organization)

Part Number*1 Speed
Grade 		Clock
Frequency
(MHz) 		Supply Voltage
(V) 		Package Remark Data
Sheet
0 to
+70°C 		-40 to
+85°C 		Chip I/O*2
µPD44165182 E50 -- 200 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(309KB)
E60 -- 167
E75 -- 133
µPD44165182A E40 E40Y 250 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(378KB)
E50 E50Y 200
µPD44165184 E40 -- 250 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(311KB)
E50 -- 200
E60 -- 167
µPD44165184A E33 -- 300 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(389KB)
-- E37Y 270
E40 E40Y 250
E50 E50Y 200


Note(*)

  1. µPD44165xx2A and µPD44165xx4A are upward compatible with µPD44165xx2 and µPD44165xx4, respectively. µPD44165xx2A and µPD44165xx4A are recommended for new designs. These products are planned to be consolidated to µPD44165xx2A and µPD44165xx4A.
  2. During normal operation, the supply voltage of I/O must not exceed that of Chip.


18M bits (512K words x 36 bits organization)

Part Number*1 Speed
Grade 		Clock
Frequency
(MHz) 		Supply Voltage
(V) 		Package Remark Data
Sheet
0 to
+70°C 		-40 to
+85°C 		Chip I/O*2
µPD44165362 E50 -- 200 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(309KB)
E60 -- 167
E75 -- 133
µPD44165362A E40 -- 250 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 2 		(378KB)
E50 -- 200
µPD44165364 E50 -- 200 1.8±0.1 1.4 to 1.9 F5-EQ1:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(311KB)
E60 -- 167
µPD44165364A E33 -- 300 1.8±0.1 1.4 to 1.9 F5-EQ2:
165-pin BGA
(13x15mm) 		Burst Length
of 4 		(389KB)
E40 -- 250
E50 -- 200


Note(*)

  1. µPD44165xx2A and µPD44165xx4A are upward compatible with µPD44165xx2 and µPD44165xx4, respectively. µPD44165xx2A and µPD44165xx4A are recommended for new designs. These products are planned to be consolidated to µPD44165xx2A and µPD44165xx4A.
  2. During normal operation, the supply voltage of I/O must not exceed that of Chip.

QDR

QDR RAMs and Quad Data Rate RAMs comprise a new series of products developed by Cypress Semiconductor, Renesas, IDT, NEC Electronics and Samsung.