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Products > ASIC > Gata Array and Embedded Array > Product Lineup >

CMOS-9HD Series


With three or optionally four metal layers and a well-proven, mid-performance process, the CMOS-9HD series allows for flexible implementation of highly complex designs. These devices can easily support system performance up to 100 MHz.


Special Features

  • 0.35 µm drawn gate length
  • 3.3V supply voltage libraries
  • Ambient operating temperature from -40 to +85°C (industrial)
  • High-speed I/Os: GTL, GTL+, HSTL, SSTL, pECL, PCI

Application

  • 3.3V single-drive medium- or large-scale system
  • Mixed 3.3V and 5V medium- or large-scale system
  • 3.3V single or mixed 3.3V and 5V I/F circuits

Specification

Item Specification
Process 0.35 µm CMOS process
Number of usable gates 11,207 to 1,500,000 gates
Supply voltage 3.3±0.3 V, 3.3±0.165 V, 3.0±0.3 V
Delay time Internal gate 131 ps (F/O=1, typical wire length)
Power gate 107 ps (F/O=1, typical wire length)
Input buffer 229 ps (F/O=2, typical wire length)
Output buffer 1.396 ps (IOL=9 mA, CL=15 pF)
Maximum operating frequency 100 MHz
Output drive capacity IOL=1, 2, 3, 6, 9, 12, 18, 24 mA
Operating ambient temperature TA=-40 to 85°C
I/O buffer 3.3 Type, 5 V tolerant, PCI, GTL+, oscillation block (MHz band)
Memory macro -Synchronous high-speed dual-port compiled RAM
-Asynchronous high-speed single-/dual-port compiled RAM
-Asynchronous high-density single-/dual-port RAM, ROM
Mega macros -Serial control unit
-Programmable timer counter
-Interrupt control unit
-UART
Test related SCAN, BSCAN
Other macros CTS, DPLL (for phase control, for multiplication), SSCG