*****For immediate use October 25, 1999

NEC TO USE MOSYS' EMBEDDED 1T-SRAM^TM TECHNOLOGY AT WORLD-LEADING PLANT FOR NEW NINTENDO GAME CONSOLE

"NEC evaluated and licensed MoSys' embedded 1T-SRAM memory technology based on its unique combination of performance, density and power capabilities not available from other SRAM technologies," said Tom Nukiyama, senior manager at NEC's 3^rd System LSI division. "Our ASIC customers now have an exciting new solution for SoC designs requiring large quantities of high-performance embedded memory."

Following the March 1^st 1999 licensing announcement, the companies have been cooperating to port and silicon-validate MoSys' embedded 1T-SRAM technology on NEC's advanced fabrication processes in a variety of configurations.

"We are pleased that NEC will use our 1T-SRAM embedded memory technology at this world-leading new semiconductor plant," said Mark-Eric Jones, vice president and general manager, intellectual property at MoSys, Inc. "This combination of our unique memory architecture and NEC's most advanced semiconductor fabrication technology provides SoC designers with tremendous capability for their next generation of highly-integrated products."

• About 1T-SRAM

• About NEC Corporation

• About MoSys

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Note for Editors:

*:	1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners.

For more information contact:
Aston Bridgman NEC Corporation TEL: +81 (3) 3798-6511 E-mail:aston@p10-22150.star.nec.co.jp	Neville Reid MoSys, Inc. TEL: +1 (408) 731-1830 E-mail:neville.reid@mosys.com