Press Release
                        Contact:-
                        Aston Bridgman
                        NEC Corporation	
                        TEL    :81-3-3798-6511
                        FAX    :81-3-3457-7249
                        E-mail : Aston_Bridgman@HO-PRD.ccgw.nec.co.jp

*****For immediate use July 7, 1998

NEC Announces 250MHz, High Speed 2Mb Synchronous SRAM

The SRAM has a 64K-word by 36-bit configuration and operates by synchronizing the clock input. With a top operating frequency of 250MHz and 3.9ns clock access time the device is the world's fastest pipeline burst SRAM. It also offers a range of operating frequencies and access times, including: 250MHz, 225MHz, 200MHz, 183MHz, 175MHz, and 167MHz, having access times of 3.9ns, 4.34ns, 4.9ns, 5.3ns, 5.3ns and 5.3ns., respectively. The µPD432836L supports both interleaved and linear burst operation, which can be switched by a burst MODE select input pin.

High speed, low power consumption and small die size have been achieved through newly designed dynamic sense amplifiers developed by NEC, and via utilization of an advanced 0.35-micron triple poly silicon and double metal CMOS SRAM process.

The main features of the µPD432836L SRAM device are:

• Advanced CMOS technology:
  0.35um CMOS technology with triple poly silicon and double metal wiring.

• High Speed Operation:
  With a latency of one in read operation, the SRAM achieves a maximum operating frequency of 250MHz with a clock access time of 3.9ns making it highly suitable for top-end personal computers and servers.

• Low Power Consumption and Small Die Size:
  Low power consumption of 350mA at 250MHz and a small die size,with 36-bit wide I/O achieved with NEC designed dynamic sense amplifiers and no pass through current type input buffer circuits.

NEC plans volume production of 400,000 units per month beginning from July, 1998.

Background

Fast SRAM has become widely used as cache memory for super computers, workstations, servers, and personal computers, as well as buffer memory in communications equipment. As microprocessors have seen greater and greater speed increases, there has been a growing need for faster cache memory in order to bring the power of these processors into full play. The µPD432836L SRAM has been developed for just such market requirements.

For Main Features of µPD432836L, please see the attached sheet.

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