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Major specifications of new device+---------------------------------+--------------------------------------------+ |Family name | CB-C9 | +---------------------------------+--------------------------------------------+ |Product name | µPD82*** | +---------------------------------+--------------------------------------------+ |Process | 0.35µm Si gate CMOS, | | | aluminum 2-layer/3-layer wiring | +---------------------------------+--------------------------------------------+ |Maximum complexity | 1600K gates | |(number of usable gates)(Note 1) | | +---------------------------------+--------------------------------------------+ |Supply voltage | 3.3±0.3V | 2.5±0.2V | +----------+----------------------+----------------------+---------------------+ | |Internal gate | 113ps (Note 2) | 151ps (Note 2) | | | | 120ps (Note 3) | 166ps (Note 3) | |Delay +----------------------+----------------------+---------------------+ |time |Input buffer | 169ps (Note 4) | 221ps (Note 4) | | +----------------------+----------------------+---------------------+ | |Output buffer | 864ps (Note 5) | 1130ps (Note 5) | +----------+----------------------+----------------------+---------------------+ |Maximum output drive capability | 24mA | 12mA (Note 6) | +---------------------------------+----------------------+---------------------+ |Power consumption | 0.7µW/MHz/gate | 0.5µW/MHz/gate | +---------------------------------+----------------------+---------------------+ |I/O interface level | LVTTL (3.3V) | LVTTL (2.5V) | +---------------------------------+----------------------+---------------------+ (Note 1): only for logic (Note 2): for 2-NAND power gate, 2 fan-outs, standard wiring length (Note 3): for 2 NAND, 2 fan-outs, standard wiring length (Note 4): for 2 fan-outs, standard wiring length (Note 5): for load capacitance 15pF, IOL=18mA (Note 6): under evaluation |