| Press Release *****For immediate use September 18th, 2002 NEC to Begin Sampling High-Density Late-Write SRAM with Fast Access Speeds-New Late-Write SRAM Products Set New Standards for Performance and Memory Density-
TOKYO and SANTA CLARA, Calif., September 18, 2002 - NEC Corporation (NASDAQ: NIPNY, FTSE: 6701q.l, TSE: 6701) and its wholly owned subsidiary in the United States, NEC Electronics Inc., today announced availability of its late-write static random access memory (SRAM) with leading memory densities and access speeds. Targeted for use in network and computing applications that require high data transmission rates and high access speeds, NEC's late-write SRAM products support speeds of up to 250 megahertz (MHz) and memory densities of up to 36 megabits (Mb). These late-write SRAM products are excellent for use in network switches and routers and in data processing applications. "As the performance requirements for network and data processing equipment have increased, so has the need for memory devices with higher densities and faster access speeds," said Hiroyuki Goto, senior marketing manager, system memory, Standard LSI Strategic Business Unit, NEC Electronics Inc. "Through our design expertise and advanced manufacturing process technology, NEC has set a new standard for late-write SRAM performance." NEC's 36 Mb late-write SRAM devices, the µPD44323182F1 (2 Mb x 18-bit I/O type) and µPD44323362F1 (1 Mb x 36-bit I/O type), were developed using the company's 0.13-micron full CMOS process technology to enable high memory density. With a new circuit design and refined configuration, these devices can support operational speeds of up to 250 MHz. Mounted on a 119-pin plastic ball grid array (PBGA) package, the devices will be available in either 2M-word x 18-bit or 1M-word x 36-bit configurations to offer customers greater design flexibility. Both models feature a high-speed transistor logic (HSTL) interface, low power consumption of 2.5 volts (V) for core circuits and 1.5V or 1.8V for input/output (I/O) circuits. NEC also plans to introduce 36 Mb pipelined-burst, flow-through, Zero Speed Bump (ZeroSBTM), pipelined-burst and ZeroSB flow-through SRAM featuring the same design and technology in fourth quarter 2002. Pricing and Availability About NEC Corporation About NEC Electronics Inc. ***
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