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*****For immediate use September 18th, 2002

NEC to Begin Sampling High-Density Late-Write SRAM with Fast Access Speeds

-New Late-Write SRAM Products Set New Standards for Performance and Memory Density-
36 Mb late-write SRAM
"36 Mb late-write SRAM"


TOKYO and SANTA CLARA, Calif., September 18, 2002 - NEC Corporation (NASDAQ: NIPNY, FTSE: 6701q.l, TSE: 6701) and its wholly owned subsidiary in the United States, NEC Electronics Inc., today announced availability of its late-write static random access memory (SRAM) with leading memory densities and access speeds. Targeted for use in network and computing applications that require high data transmission rates and high access speeds, NEC's late-write SRAM products support speeds of up to 250 megahertz (MHz) and memory densities of up to 36 megabits (Mb). These late-write SRAM products are excellent for use in network switches and routers and in data processing applications.

"As the performance requirements for network and data processing equipment have increased, so has the need for memory devices with higher densities and faster access speeds," said Hiroyuki Goto, senior marketing manager, system memory, Standard LSI Strategic Business Unit, NEC Electronics Inc. "Through our design expertise and advanced manufacturing process technology, NEC has set a new standard for late-write SRAM performance."

NEC's 36 Mb late-write SRAM devices, the µPD44323182F1 (2 Mb x 18-bit I/O type) and µPD44323362F1 (1 Mb x 36-bit I/O type), were developed using the company's 0.13-micron full CMOS process technology to enable high memory density. With a new circuit design and refined configuration, these devices can support operational speeds of up to 250 MHz.

Mounted on a 119-pin plastic ball grid array (PBGA) package, the devices will be available in either 2M-word x 18-bit or 1M-word x 36-bit configurations to offer customers greater design flexibility. Both models feature a high-speed transistor logic (HSTL) interface, low power consumption of 2.5 volts (V) for core circuits and 1.5V or 1.8V for input/output (I/O) circuits.

NEC also plans to introduce 36 Mb pipelined-burst, flow-through, Zero Speed Bump (ZeroSBTM), pipelined-burst and ZeroSB flow-through SRAM featuring the same design and technology in fourth quarter 2002.

Pricing and Availability
Engineering samples of the 36 Mb late-write SRAM products are expected to be $170 per unit with availability planned for September 2002. Volume production is scheduled for early 2003. Pricing and availability are subject to change.

About NEC Corporation
NEC Corporation (NASDAQ: NIPNY) is a leading provider of Internet solutions, dedicated to meeting the specialized needs of its customers in the key computer network and electron device fields through its three market-focused in-house companies: NEC Solutions, NEC Networks and NEC Electron Devices. NEC Corporation, with its in-house companies, employs more than 140,000 people worldwide and saw net sales of approximately $39 billion in fiscal year 2001-2002. For further information, visit the NEC home page at http://www.nec.com/.

About NEC Electronics Inc.
NEC Electronics Inc., headquartered in Santa Clara, Calif., is one of the leading developers, manufacturers and suppliers of semiconductor products in the United States. Committed to meeting customers' cost, performance and time-to-market requirements, the company offers solutions ranging from standard products to system-on-a-chip (SoC) solutions, as well as customized products for next-generation designs. NEC Electronics also offers customers the benefits of a local manufacturing facility in Roseville, Calif., and the global manufacturing capabilities of its parent company, NEC Corporation (NASDAQ: NIPNY). For more information about products offered by NEC Electronics Inc., visit the NEC Electronics website at http://www.necel.com

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Press Contacts

United States
Denise Viereck Garibaldi
NEC Electronics Inc.
(408) 588-6620
denise_garibaldi@el.nec.com  
Japan
Daniel Mathieson
NEC Corporation
+81-3-3798-6511
d-mathieson@bu.jp.nec.com
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