NEC'S MEMORY DIVISION LICENSES MOSYS' 1T-SRAM^TM TECHNOLOGY FOR HIGH-DENSITY APPLICATION-SPECIFIC MEMORIES

SUNNYVALE, CA and TOKYO, JAPAN, January 31, 2000 --- MoSys, Inc. and NEC Corporation (NEC) (NASDAQ: NIPNY) (FTSE: 6701q.1) announced today the licensing of MoSys' 1T-SRAM^* technology for use by NEC's 1st LSI Memory Division in high-density application-specific memories that will notably count Nintendo's next-generation game console among its future applications. Details of the product will be announced at a later time.

"NEC evaluated and licensed MoSys' 1T-SRAM memory technology based on its unique combination of performance, density and power capabilities not available from other technologies," said Kazu Tokushige, chief manager at NEC's 1st LSI Memory Division.

Following the March 1^st 1999 licensing announcement, the companies have been cooperating to port and silicon-validate MoSys' 1T-SRAM technology on NEC's advanced fabrication processes in a variety of configurations.

"We are pleased that NEC will extend the use of our 1T-SRAM memory technology to stand-alone high-density application-specific memory devices," said Mark-Eric Jones, vice president and general manager, intellectual property at MoSys, Inc. "This builds on the previously announced relationship offering embedded 1T-SRAM technology to NEC's ASIC customers."

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Note for Editors:

*:	1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners.