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Introduction to General-Purpose Products for Set Top Boxes(STB)

Introduction to Key Devices

Power MOSFETs for Power Supply Blocks and Noise Clipping Diodes for High-Speed Serial Communications

Circuit Diagram

Figure1 : Circuit Diagram

Power MOSFET

For DC/DC converter
MOSFET with SCHOTTKY BARRIER DIODE

Type No.	Package	MOSFET									SBD
Type No.	Package	Polarity	VDSS (V)	VGSS (V)	ID(DC) (A)	Ron1 (mohm) typ/max at 4.5V	Ron2 (mohm) typ/max at 2.5V	Ron3 (mohm) typ/max at 1.8V	Ciss (pF) typ	QG (nC) typ	VRRM (V)	IF(AV) (A)	VF (V) max	IR (uA) max
μPA507TE	SC-95 5pin	Pch	-20	±8	±2	68/85	84/120	109/180	380	4.7	30	1	0.38 at 1A	200 at 10V
μPA508TE	SC-95 5pin	Nch	20	±12	±2	40/51	59/90	-	170	2.7	30	1	0.38 at 1A	200 at 10V
μPA1980TE	SC-95	Pch	-20	±8	±2	116/135	142/183	170/284	272	2.3	40	0.5	0.51 at 0.5A	20 at 40V

Power-Supply ICs

Part number	VIN max (V)	Io (A)	Vo (V)	TYPE	Adjustable	ON/OFF function	NEC package	General package	Package quantity	Total Power Dissipation (W)	pb-free status*
μPC2918BT1D	16	1.0	1.8	LDO	No	No	TO-252	TO-252	2500	10	AT
μPC2918BT	16	1.0	1.8	LDO	No	No	MP-3Z	SC-63	2000	10	AZ
μPC2918BHF	16	1.0	1.8	LDO	No	No	MP-45G	TO-220	200	15	AZ
μPC2918BHB	16	1.0	1.8	LDO	No	No	MP-3	SC-64	500	10	AZ
μPC2925BT1D	16	1.0	2.5	LDO	No	No	TO-252	TO-252	2500	10	AT
μPC2925BT	16	1.0	2.5	LDO	No	No	MP-3Z	SC-63	2000	10	AZ
μPC2925BHF	16	1.0	2.5	LDO	No	No	MP-45G	TO-220	200	15	AZ
μPC2925BHB	16	1.0	2.5	LDO	No	No	MP-3	SC-64	500	10	AZ
μPC2933BT1D	16	1.0	3.3	LDO	No	No	TO-252	TO-252	2500	10	AT
μPC2933BT	16	1.0	3.3	LDO	No	No	MP-3Z	SC-63	2000	10	AZ
μPC2933BHF	16	1.0	3.3	LDO	No	No	MP-45G	TO-220	200	15	AZ
μPC2933BHB	16	1.0	3.3	LDO	No	No	MP-3	SC-64	500	10	AZ
μPC2905BT1D	16	1.0	5.0	LDO	No	No	TO-252	TO-252	2500	10	AT
μPC2905BT	16	1.0	5.0	LDO	No	No	MP-3Z	SC-63	2000	10	AZ
μPC2905BHF	16	1.0	5.0	LDO	No	No	MP-45G	TO-220	200	15	AZ
μPC2905BHB	16	1.0	5.0	LDO	No	No	MP-3	SC-64	500	10	AZ
μPD120N15TA	6	0.3	1.5	CMOS	No	No	SC-74A	SC-74A	3000	0.18	A
μPD120N15T1B	6	0.3	1.5	CMOS	No	No	SC-62	SC-62	1000	0.4	AZ
μPD120N18TA	6	0.3	1.8	CMOS	No	No	SC-74A	SC-74A	3000	0.18	A
μPD120N18T1B	6	0.3	1.8	CMOS	No	No	SC-62	SC-62	1000	0.4	AZ
μPD120N25TA	6	0.3	2.5	CMOS	No	No	SC-74A	SC-74A	3000	0.18	A
μPD120N25T1B	6	0.3	2.5	CMOS	No	No	SC-62	SC-62	1000	0.4	AZ
μPD120N33TA	6	0.3	3.3	CMOS	No	No	SC-74A	SC-74A	3000	0.18	A
μPD120N33T1B	6	0.3	3.3	CMOS	No	No	SC-62	SC-62	1000	0.4	AZ
μPC3033H	8	1.0	3.3	LDO	No	Yes	MP-5(4pin)	TO-126	200	12.5	AZ
μPC3005H	8	1.0	5.0	LDO	No	Yes	MP-5(4pin)	TO-126	200	12.5	AZ
μPC37M21TJ	8	1/0.5	2.5/1.8	Dual output	No	No	MP-3Z(5pin)	SC-98	2000	10	AZ
μPC37M31TJ	8	1/0.5	3.3/1.8	Dual output	No	No	MP-3Z(5pin)	SC-98	2000	10	AZ
μPC37M32TJ	8	1/0.5	3.3/2.5	Dual output	No	No	MP-3Z(5pin)	SC-98	2000	10	AZ
μPC37M21HB	8	1/0.5	2.5/1.8	Dual output	No	No	MP-3(5pin)	SC-99	100	10	AZ
μPC37M31HB	8	1/0.5	3.3/1.8	Dual output	No	No	MP-3(5pin)	SC-99	100	10	AZ
μPC37M32HB	8	1/0.5	3.3/2.5	Dual output	No	No	MP-3(5pin)	SC-99	100	10	AZ

Surge Absorber Devices for ESD (electro-static discharge) Protection

Part number	NSAD500F	NSAD500S	NSAD500H
Elements	2 diodes	2 diodes	4 diodes
Package	SC-59	SC-70	SC-88A

Maximum rating (TA=25°C)

Item	Symbol	Rating	Unit	Remark
Power dissipation	P	200 (S-type:150)	mW	total
Junction temperature	Tj	150	°C	-
Strage temperature	Tstg	-55～ +150	°C	-

Electrical characteristics (TA=25°C (A to K1, K2, K3, K4))

Break over Voltage VBO (V)		Capacitance Ct (pF)		Reverse current IF (uA)		ESD [*1] (kV)		<reference> Forward Break over Voltage
Min	TYP	TYP	Condition	MAX	VF(V)	MIN	Condition	<reference> Forward Break over Voltage
5.3	8	3.5	VR=0V f=1MHz	0.1	3.0	8	C=150pF R=330Ω Contact discharge	10V TYP

[*1] Biased μPon with IEC 61000-4-2.


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