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Introduction to General-Purpose Products for Notebook PCs

Introduction to Key Devices

NEC Electronics offers a variety of small low on-resistance Power MOSFETs mounted on motherboards. Lower on-resistance and a smaller gate electric charge than conventional products has been achieved by adopting the 0.25 μm process "UMOS4". Mounted on small packages TO-251 and TO-252, the Power MOSFETs are suitable for CPU power supplies on motherboards. ESD measures are becoming indispensable in the desktop and PC area, where the trend for high-clock CPUs and high-speed interfaces is accelerating every year. NEC Electronics offers the NSDA and NNCD series as ESD protective devices. The NSDA series is suitable for use in high-speed interfaces, and its low terminal capacitance gives ESD protection without affecting high-speed data transfer. The NNCD series that employs a flat lead package is suitable for ESD protection for small devices that require high-density mounting. The maximum height of the package is 0.5 mm. Mounting area can be reduced by 50% for two pins and by 38% for five pins (our super small-sized mold ratio).

Roadmap and Circuit Diagram

Figure1: Roadmap and Circuit Diagram

Power MOSFET

8pin HSOP Power MOSFET Series

N-channel Single

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	PT1 (W) Tc=25	PT2 (W) Ta=25 10s	RDS(on)max (mohm)		Ciss (pF)	QG (nC) (VGS)=5V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	PT1 (W) Tc=25	PT2 (W) Ta=25 10s	at 10V	at 4.5V	Ciss (pF)	QG (nC) (VGS)=5V
μPA2707TP	30	±20	±42	40	3	4.3	5.6	6600	52
μPA2708TP	30	±20	±42	35	3	5.5	7.5	4700	38
μPA2701TP	30	±20	±35	28	3	7.5	11.6	1200	12
μPA2702TP	30	±20	±35	22	3	9.5	15.1	900	9
μPA2706TP	30	±20	±20	15	3	15	22.5	660	7.1

P-channel Single

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	PT1 (W) Tc=25	PT2 (W) Ta=25 10s	RDS(on)max (mohm)		Ciss (pF)	QG (nC) (VGS)=10V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	PT1 (W) Tc=25	PT2 (W) Ta=25 10s	at 10V	at 4.5V	Ciss (pF)	QG (nC) (VGS)=10V
μPA1730TP	-30	±20	±28	40	3	9.5	13.5	3800	70
μPA2730TP	-30	±20	±42	40	3	7	10.5	4600	97

8pin SOP Power MOSFET Series

N-channel Single

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	RDS(on)max (mohm)		Ciss (pF)	QG (nC) (VGS)=5V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	at 10V	at 4.5V	Ciss (pF)	QG (nC) (VGS)=5V
μPA2707GR	30	±20	±19	4.3	5.6	6600	52
μPA2708GR	30	±20	±17	5.5	7.5	4700	38
μPA2701GR	30	±20	±14	7.5	11.6	1200	12
μPA2702GR	30	±20	±13	9.5	15.1	900	9
μPA2706GR	30	±20	±11	15	22.5	660	7.1

P-channel Single+Schottky

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	RDS(on)max (mohm)		Ciss (pF)	QG (nC) (VGS)=5V	VF max (V) IF=1A
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	at 10V	at 4.5V	Ciss (pF)	QG (nC) (VGS)=5V	VF max (V) IF=1A
μPA2780GR	30	±20	±14	7.5	11.6	1300	12	0.5
μPA2781GR	30	±20	±13	9.5	15.1	1000	9	0.5
μPA2782GR	30	±20	±11	15	22.5	650	7.1	0.5

8pin SOP Power MOSFET Series

P-channel Single

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	RDS(on)max (mohm)		Ciss (pF)	QG (nC) (VGS)=10V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	at -10V	at -4.5V	Ciss (pF)	QG (nC) (VGS)=10V
μPA2717GR	-30	±20	±15	5.5	9.4	3550	130
μPA2716GR	-30	±20	±14	7.0	8.9	3000	95
μPA2718GR	-30	±20	±13	9.0	14.5	2810	67
μPA2719GR	-30	±20	±10	13	20.9	2010	43
μPA2713GR	-30	±20	± 8	16	25	1640	35
μPA2714GR	-30	±20	± 7	20	30	1370	31
μPA2733GR	-30	±20	± 5	40	53	840	18
μPA1717	-30	±25	± 6	33	59	830	15

8pin SOP Power MOSFET Series

N-channel Dual

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	RDS(on)max (mohm)			Ciss (pF)	QG (nC) (VGS)=10V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	at 10V	at 4.5V	at 2.5V	Ciss (pF)	QG (nC) (VGS)=10V
μPA2750GR	30	±20	±9	15.5	21	-	1040	21
μPA2751GR	30	±20	±9	15.5	21	-	1040	21
μPA2751GR	30	±20	±8	23	35	-	480	10
μPA2755GR	30	±20	±8	18	29	-	650	13
μPA2754GR	30	±12	±11	-	14.5	18.6	1940	25*1

*1:VGS=4.5V

P-channel Dual

Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	RDS(on)max (mohm)			Ciss (pF)	QG (nC) (VGS)=10V
Type No.	VD SS [V]	VG SS [V]	ID (DC) [A]	at 10V	at 4.5V	at 2.5V	Ciss (pF)	QG (nC) (VGS)=10V
μPA1750	-20	±20	±3.5	90	180*1	-	540	18
μPA1770	-20	±12	±6	-	37	59	1300	11
μPA1772	-20	±20	±8	20	29.5	-	1500	34

*1:@-4V

8pin HWSON Series

Type No.	Config	VD SS [V]	VG SS [V]	ID (DC) [A]	PT (W) #	Ron1 (mohm) typ/max at10V	Ron1 (mohm) typ/max at4.5V	Ciss (pF) typ VDS=10V	Crss (pF) typ VDS=10V	QG (nC) typ (VGS)
μPA2502	Nch Single	30	±20	±13	2.7	9.4/12.0	13.2/18.0	760	110	9(5V)
μPA2503	Nch Single	30	±20	±16	2.7	7.5/9.5	11.0/15.1	1200	190	15(5V)
μPA2510	Pch Single	-30	±20	±18	2.7	7.5/10.1	9.5/14.0	3000	500	70 (-10V)

Wireless bonding product
#FR-4 Board of 25㎝2, PW<10sec.

Noise Clipping Diodes (NNCD) for ESD Protection

Guarantee an ESD withstand capability of not less than 15 kV and feature low terminal capacitance that allows protection of high-speed signal lines.

Type		Surface mounting type
Allowable loss		200mW
ESD withstand capability		8kVmin			30kVmin
Capacity		10pFtyp			20pFtyp
Series		NNCD[　]LG	NNCD[　]LH	NNCD[　]RL	NNCD[　]MF	NNCD[　]MG
Breakdown voltage	5.6V	NNCD5.6LG	NNCD5.6LH	-	-	NNCD5.6MG
	6.2V	NNCD6.2LG	NNCD6.2LH	-	NNCD6.2MF	NNCD6.2MG
	6.8V	NNCD6.8RG	NNCD6.8RH	NNCD6.8RL	-	NNCD6.8MG
Package		SC-74A (Quad)	SC-88B (Quad)	5pin×SOF (Quad)	SC-59 (Dual)	SC-74A (Quad)
Package


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