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Introduction to General-Purpose Products for Hard Disks
Hard Disks

Hard disks used as memory for personal computers have been expanding in capacity by leaps and bounds, and are now being employed in a wider range of applications, including mounting on DVD recorders.
NEC Electronics offers a line-up of MOSFET products suitable for hard disk power supplies, contributing to lower power consumption.
Specifically, we supply a series of products with MOSFET + SBD in one package suitable for DC/DC converter circuits that generate various voltages, ranging from 5V power supply voltage fed to hard disks and 1.2-3.3 V for internal dedicated LSIs, to negative voltage, as well as MOSFET products for series regulator circuits.
NEC Electronics offers the NSAD and NNCD series as ESD protective devices for the external interfaces of hard disks. In particular, the NSAD series features low terminal capacitance suitable for use in high-speed interfaces, and provides ESD protection that does not affect high-speed data transfer.


Circuit Diagram


Figure1: Circuit Diagram
Figure1: Circuit Diagram



Power Supply Circuit Devices
DC/DC Converter Circuits


MOSFET with Schottky Barrier Diode
Type No. Package MOSEFT SBD
Polarity VDSS
[V]		 VGSS
[V]		 ID
(DC)
[A]		 Ron1
(mohm)
typ
/max.
at 4.5V		 Ron2
(mohm)
typ
/max.
at 2.5V		 Ron3
(mohm)
typ
/max.
at 1.8V		 Ciss
(pF)
typ		 QG
(nC)
typ		 VR
RM
(V)		 IF
(AV)
(A)		 VF
(V)
max		 IR
(uA)
max
μPA507 SC-95 5pin Pch -20 ±8 ±2 68/85 84/120 109/180 380 4.7 30 1 0.38
at 1A		 200
at 10V
μPA508 SC-95 5pin Nch +20 ±12 ±2 40/51 59/90 - 170 2.7
μPA1980 SC-95 Pch -20 ±8 ±2 116/135 142/183 170/284 272 2.3 40 0.5 0.51
at 0.5A		 20
at 40V



Series Regulator Circuits

Package : 6pWSOF
Polarity Type No. Config VDSS
(V)		 VGSS
(V)		 ID
(DC)
(A)		 Ron1
(mohm)
typ/max
at1.8V		 Ron2
(mohm)
typ/max
at2.5V		 Ron3
(mohm)
typ/max
at4.5V		 Ron4
(mohm)
typ/max
at10V		 Ciss
(pF)
typ		 QG
(nC)
typ
Nch μPA620TT Single 20 ±12 ±5.0 - 40/54 30/38 - 450 5.5
μPA621TT Single 20 ±12 ±5.0 - 59/79 40/50 - 270 3.3
Pch μPA650TT Single -12 ±8 ±5.0 68/114 51/68 40/50 - 610 5.5
μPA651TT Single -20 ±8 ±5.0 85/142 66/88 55/69 - 600 5.5
μPA652TT Single -20 ±12 ±2.0 - 385/514 235/294 - 126 1.0

Package : 8LD3x2MLPM
Polarity Type No. Config VDSS
(V)		 VGSS
(V)		 ID(DC)
(A)		 PT
(W)
#		 Ron1
(mOhm)
typ/max
at 1.8V		 Ron2
(mOhm)
typ/max
at 2.5V		 Ron3
(mOhm)
typ/max
at 4.5V		 Ciss
(pF)
typ		 QG
(nC)
typ
Pch μPA2610T1C Single -20 ± 8 ± 5 1.9 85/142 66/88 55/69 600 5.5
#Mounted on Fr-4 board PW < 10sec


ESD Protective Devices
NNCD:NEC Noise Clipping Diode


  Low Capacitance Low Capacitance High ESD
Power 200mW 200mW
ESD 8kVmin. 30kVmin.
Ct 10pFtyp. 20pFtyp.
Series NNCD[　]LG
NNCD[　]RG		 NNCD[　]LH
NNCD[　]RH		 NNCD[　]RL NNCD[　]MF NNCD[　]MG
VBR 5.6V NNCD5.6LG NNCD5.6LH - - NNCD5.6MG
6.2V NNCD6.2LG NNCD6.2LH - NNCD6.2MF NNCD6.2MG
6.8V NNCD6.8RG NNCD6.8RH NNCD6.8RL - NNCD6.8MG
Package SC-74A
(Quad)
SC-74A(Quad)		 SC-88A
(Quad)
SC-88A(Quad)		 5pin×SOF
(Quad)
5pin X SOF(Quad)		 SC-59
(Dual)
SC-59(Dual)		 SC-74A
(Quad)
SC-74A(Quad)



NSAD:NEC S


Part number NSAD500F NSAD500S NSAD500H
Elements 2 diodes
2 diodes		 2 diodes
2 diodes		 4 diodes
4 diodes
Package SC-59
(Dual)
SC-59(Dual) 		SC-70
(Dual)
SC-70(Dual) 		SC-88A
(Quad)
SC-88A(Quad)

Maximum rating (TA=25°C)
Item Symbol Rating Unit Remark
Power dissipation P 200 (S-type:150) mW total
Junction temperature Tj 150 °C -
Strage temperature Tstg -55～ +150 °C -


Electrical characteristics (TA=25°C (A to K1, K2, K3, K4))
Break over
Voltage
VBO (V)		 Capacitance
Ct (pF)		 Reverse current
IF (uA)		 ESD [*1]
(kV)		 <Reference>
Forward
Break over
Voltage
Min TYP TYP condition MAX VF(V) MIN Condition
5.3 8 3.5 VR=0V
f=1MHz		 0.1 3.0 8 C=150pF
R=330Ω
Contact
discharge		 10V TYP
[*1] Biased upon with IEC 61000-4-2.


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