NEC ELECTRONICS GLOBAL
nec electronics global
HOME
APPLICATIONS
PRODUCTS
TECHNOLOGY
SUPPORT
BUY ONLINE
NEWS & EVENTS
ABOUT US
header
GO
AdvancedParametric
SITE MAP CONTACT US

Introduction to General-Purpose Products for Digital Cameras


Digital Cameras

About Diode Products

ESD measures are becoming an issue of great importance in the area of digital cameras, where products are shrinking and offering more sophisticated functions. The NSDA series, our ESD protective device series, is suitable for use in USB 2.0 and IEEE 1394 compliant high-speed interfaces, and its low terminal capacitance allows ESD protection that does not affect high-speed data transfer. A choice of two- or four-circuit product packages is available depending on the number of data lines.



Circuit Diagram


Figure1: Circuit Diagram
Figure1: Circuit Diagram



Noise Clipping Diodes (NNCD) for ESD Protection


Type Surface Mounting Type
Allowable loss 200mW
ESD withstand capability 8kVmin 30kVmin
Capacity 10pFtyp 20pFtyp
Series NNCD[  ]LG NNCD[  ]LH NNCD[  ]RL NNCD[  ]MF NNCD[  ]MG
Breakdown voltage 5.6V NNCD5.6LG NNCD5.6LH - - NNCD5.6MG
6.2V NNCD6.2LG NNCD6.2LH - NNCD6.2MF NNCD6.2MG
6.8V NNCD6.8RG NNCD6.8RH NNCD6.8RL - NNCD6.8MG
Package SC-74A
(Quad)
SC-88B
(Quad)
5pin×SOF
(Quad)
SC-59
(Dual)
SC-74A
(Quad)
SC-74A(Quad)
Size: SC-74A(Quad)
SC-88B(Quad)
Size: SC-88B(Quad)
5pin X SOF(Quad)
Size: 5pin X SOF(Quad)
SC-59(Dual)
Size: SC-59(Dual)
SC-74A(Quad)
Size: SC-74A(Quad)


Surge Absorber Devices for ESD Protection

Guarantee an ESD withstand capability of not less than 15 kV and feature low terminal capacitance that allows protection of high-speed signal lines.
Part number NSAD500F NSAD500S NSAD500H
Elements 2 diodes
2 diodes
2 diodes
2 diodes
4 diodes
4 diodes
Package SC-59 SC-70 SC-88A

Maximum rating (TA=25°C)
Item Symbol Rating Unit Remark
Power dissipation P 200 (S-type:150) mW total
Junction temperature Tj 150 °C -
Strage temperature Tstg -55~ +150 °C -


Electrical characteristics (TA=25°C (A to K1, K2, K3, K4))
Break over
Voltage
VBO (V)
Capacitance
Ct (pF)
Reverse Current
IF (uA)
ESD [*1]
(kV)
<reference>
Forward
Break over
Voltage
Min TYP TYP Condition MAX VF(V) MIN Condition
5.3 8 3.5 VR=0V
f=1MHz
0.1 3.0 8 C=150pF
R=330Ω
Contact
discharge
10V TYP
[*1] Biased upon with IEC 61000-4-2.


Motor Driver ICs

Drive motors for zooming or focusing accurately that also contribute to elimination of motor noise.


Product Name Power Supply Voltage Circuit Current
(mA)
Output Current
(A)
Allowable Loss
(W)
Output on-Resistance
(Ω)
Package Functionality Number of H-Bridge Output Channels
Control Section
(V)
Output Section
(V)
μPD168101MA-6A5 2.5~5.5 2.7~5.5 0.01 0.25 0.7 1.5max. 24-TSSOP Voltage-driven, Short brake enabled
Built-in overheat protection
4ch
μPD168102K9-5B4 0.1 0.3x4ch
0.5x2ch
1.0 2.0max.x4ch
1.5max.x2ch
48-WQFN 4 voltage-driven channels
2 current-driven channels
Constant current drive enabled
6ch
μPD168110MA-6A5 2.7~3.6 3.0 0.35 0.7 2.0max. 24-TSSOP Current driven, Micro-step enabled
Pulse control
64-division and 2-phase excitation switching
2ch
μPD168111AMA-6A5 Current-driven, Micro-step enabled Serial communications
Acceleration and deceleration control
64-division and 2-phase excitation switching
μPD168112K9-5B4 1.0 48-WQFN 4 voltage-driven channels
2 current-driven channels
Serial communications
Stepping
DC drive, Constant current drive enabled
6ch
μPD168113K9-9B4 5.0 0.4 1.5max. 56-WQFN 2 voltage-driven channels
5 current-driven channels
Micro-step enabled, Serial communications
Stepping
DC drive
Constant current drive enabled
7ch
μPD168116AK9-9B4 2 voltage-driven channels
5 current-driven channels
Micro-step enabled, Pulse control
Stepping
DC drive
Constant current drive enabled
μPD168117K9-9B4 2 voltage-driven channels
5 current-driven channels
Micro-step enabled, Pulse control
Stepping
DC drive
Constant current drive enabled
128-division control enabled
μPD168117AFC-BA2 64-FPLGA


Power Management Switches


MOSFET
            typ/max
at 1.8V
typ/max
at 2.5V
typ/max
at 4.5V
typ/max
at 10V
typ typ
Nch μPA620TT Single 20 +12 ±5.0 - 40/54 30/38 - 450 5.5


DC/DC Converter Circuit

MOSFET with SCHOTTKY BARRIER DIODE

Type No. Pack
age
MOSEFT SBD
Pola
rity
VD
SS
[V]
VG
SS
[V]
ID
(DC)
[A]
Ron1
(mohm)
typ
/max
at 4.5V
Ron2
(mohm)
typ
/max
at 2.5V
Ron3
(mohm)
typ
/max
at 1.8V
Ciss
(pF)
typ
QG
(nC)
typ
VR
RM
(V)
IF
(AV)
(A)
VF
(V)
max
IR
(uA)
max
μPA507TE SC-95 5pin Pch -20 ±8 ±2 68/85 84/120 109/180 380 4.7 30 1 0.38
at
1A
200
at
10V
μPA508TE SC-95 5pin Nch -20 ±8 ±2 40/51 59/90 - 170 2.7
μPA1980TE SC-95 Pch -20 ±8 ±2 116/135 142/183 170/284 272 2.3 40 0.5 0.51
at
0.5A
20
at
40V


BACK TO TOP
 LEGAL  RSS Feeds       © 1995-2008  NEC Electronics Corporation