Please note that JavaScript and style sheet are used in this website,
Due to unadaptability of the style sheet with the browser used in your computer, pages may not look as original.
Even in such a case, however, the contents can be used safely.
Volume 79 (Sep 17, 2008)
Overview of Papers Presented at IITC 2008 (1/4)
The world's most advanced interconnect technology was announced at the IEEE International Interconnect Technology Conference (IITC) 2008, held June 1 to June 4 in San Francisco. Engineers from NEC Corporation and NEC Electronics introduced their joint research results at this year's conference.
What is IITC?
IITC is an IEEE organization that specializes in interconnect issues at the system level, including silicon semiconductor wiring processes and integration, wiring design, and matters related to implementation, antennas and other RF technology. The conference has been held in June in San Francisco every year since 1998. This year's nearly 400 participants, fewer than average, included many equipment vendors, semiconductor manufacturers and semiconductor materials vendors who attended vendor seminars and exhibits that were held at the same time. IITC paper topics this year extended beyond previous interconnect processes and integration to include 3D processes and manufacturing. Of the 110 papers submitted, about 28% were selected for oral presentation, and counting poster sessions, about half were presented overall. In addition to papers about interconnect technology based on the 22- nanometer (nm) node, successor to the 45- to 32-nm node (the previous technology trend) and individual process technologies such as low-k materials, many papers introduced new technologies such as carbon nanotubes and nanowires as well as 3D and other mounting technology. By region, there was about equal representation from North America, Europe and Asia. There were many presentations by North American universities and European research organizations on 3D and new technology, and fundamental research was presented mainly by representatives from Europe and North America. Four papers from the NEC Group were selected.
Papers Involving NEC Electronics
Three NEC Electronics papers were selected for IITC.
- Session 10.6:
- Highly-Reliable Low-Resistance Cu Interconnects with PVD-Ru/Ti Barrier Metal for Automotive LSIs
- To achieve low resistance and high reliability in the copper (Cu) wiring of next-generation LSI chips, we developed a new ruthenium (Ru) barrier structure that has superior lattice matching and adhesion with the copper layer. This reduces via resistance by 70% compared to the conventional high resistance tantalum (Ta) barrier and greatly improves reliability.
- Session 11.4:
- Quantitative Analysis of Correlation Between Insulator Surface Copper Contamination and TDDB Lifetime Based on Actual Measurement
- We have clarified the relationship between time-dependent dielectric breakdown (TDDB) due to changes in the insulation layer over time and the amount of residual metal at the inter-layer insulation layer interface in copper wiring for use in 32-nanometer (nm) generation LSI chips. We improved reliability by controlling rinsing conditions to reduce residual metallic copper and copper ions.
- Session 11.5:
- Low-Temperature Plasma-Oxidation Process for Reliable Tantalum-Oxide (TaO) Decoupling Capacitors
- For better suppression of power supply noise in high-speed LSI chips, we developed a highly reliable capacitor using a high dielectric constant (high-k) material. We reduced costs by using existing facilities to form a high-k TaO thin film and achieved high reliability by modifying the electrode structure.
971KB)