Please note that JavaScript and style sheet are used in this website,
Due to unadaptability of the style sheet with the browser used in your computer, pages may not look as original.
Even in such a case, however, the contents can be used safely.
From June 14 to 18, the 2005 Symposia on VLSI Technology and Circuits was held at the Riga Royal Hotel in Kyoto, where a number of scientists made presentations about the state of the art in device, process and circuit technology. This summarizes the research results presented by NEC Electronics in collaboration with NEC at the symposia this year.
The Symposia on VLSI Technology and Circuits, along with IEDM (International Electron Devices Meeting) and ISSCC (International Solid State Circuits Conference) is one of the largest conferences in the field of semiconductor electronic devices and circuit technology. The symposia are composed of the VLSI Technology Symposium, which focuses on devices and processes, and the VLSI Circuits Symposium, which focuses on VLSI circuit technology. This year, of 255 papers submitted to the VLSI Technology Symposium, 90 were selected. The number of papers on front-end topics such as metal gates and strained-Si channels increased, as did those related to SRAM. Of 259 papers submitted to the VLSI Circuits Symposium, 92 were accepted, some of which reported on themes such as ultra-wideband (UWB) technology and microprocessors.
Short courses also were conducted during the conference: VLSI Technology offered lectures on 45/32 nm node technology and VLSI Circuits on multi-GHz clocks for microprocessors.
From the NEC Group companies, four papers were accepted to VLSI Technology and one to VLSI Circuits. Of those, NEC Electronics presented three papers in collaboration with NEC.
<<Paper Titles>>