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Products > ASIC > Cell-Based IC > Product Lineup >

CB-9VX/VM (Features/Basic Specification)


Features

These cell-based ICs are based on 0.35 µm CMOS process technology.
CB-9VX features a 3.3 V single power supply. CB-9VM supports dual power supply with 3.3 V power internally and 5 V power for the I/O block, plus 5 V full swing signals I/O. There are product versions, which include steps of usable gate counts (from about 80,000 gates to 1 million gates), enabling customers to select exactly the product size they need. These models are well suited for applications that require a 5 V interface, such as in certain industry fields.


Basic Specifications

Series Name CB-9VX CB-9VM
Product name µPD82200 µPD82600
Technology 0.35 µm CMOS process
Power supply voltage Internal 3.3 V
I/O block 3.3 V 3.3 V/5 V
Mountable gates (minimum step) *1 79 K gates 60 K gates
Mountable gates (maximum step) *1 965 K gates 940 K gates
Maximum system frequency 70 MHz
Power consumption 0.3 µW/MHz/gates
Memory (capacity) 1-port HS SRAM 1 to 32 bits, 32 words to 2 K words
1-port Super HS SRAM 1 to 16 bits, 64 words to 1 K words
1-port HD SRAM 1 to 32 bits, 32 words to 8 K words
2-port HS SRAM 1 to 32 bits, 32 words to 2 K words
2-port HD SRAM 1 to 32 bits, 32 words to 1 K words
2-port Resister File 4 to 64 bits, 8 to 512 words
Fixed-capacity 1-port SRAM 16 bits × 2 K words to 16 bits × 16 K words
(four types)
HS ROM 1 to 64 bits, 64 words to 8 K words
Line Buffer 8 bits × 7,504 words
Package QFP, FPBGA, PBGA


Note(*)

  1. The mountable gates are the maximum number of usable gates (average value) when mounting only logic gates on the chip. This number can vary greatly depending on the circuit configuration and the types and number of mounted cores.