CB-90 (Features/Basic Specifications)

Features

These are cell-based ICs based on 90 nm CMOS process technology.
This is a high-speed, low-power product that operates on a 1.0 V internal power supply (M or H type). The L type (V_DD = 1.2 V operation) features drastically reduced static current consumption, and is designed for battery-powered equipment such as mobile phones.
The H type are both intended for a limited range of applications, so be sure to contact NEC Electronics before using them.

Basic Specification

Series Name CB-90L CB-90M Product name µPD809000 µPD808000 Technology 90 nm CMOS process Power supply voltage Internal 1.2 V 1.0 V I/O block 3.3 V 3.3 V or 2.5 V or 1.8 V Mountable gates (minimum step)*1 2.7 M gates 3.0 M gates Mountable gates (maximum step)*1 16.5 M gates 27.4 M gates Maximum system frequency 200 MHz 366 MHz Power consumption (Operation rate: 0.35) 2.7 nW/MHz/gates 1.8 nW/MHz/gates Memory (capacity) 1-port SRAM 2 to 128 bits, 8 words to 16 K words 2 to 128 bits, 8 words to 16 K words 2-port (1R+1W) SRAM 2 to 128 bits, 8 words to 512 words 2 to 290 bits, 8 words to 2 K words 2-port (1RW+1RW) SRAM 2 to 128 bits, 128 words to 8 K words 2 to 128 bits, 128 words to 8 K words ROM 2 to 128 bits, 128 words to 16 K words 2 to 128 bits, 128 words to 16 K words Package QFP, FPBGA, PBGA, ABGA

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