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CB-55L (Features/Basic Specifications)

Features

These are cutting-edge cell-based ICs based on 55 nm CMOS process technology.
It incorporates transistors using High-k insulation layers, for realization of low leakage current and high-speed operation.
Compared with the conventional CB-90, it reduces leakage current from between 25% to 50% and cuts power consumption by approximately 60% in 1.0 V operation, and increases operation speed by approximately 20% in 1.2 V operation, while achieving roughly one half of the chip size of an equally-functional LSI.
Providing an IP core equipped with a PLL, A/D converter, D/A converter and other commodities, and with an IP core providing USB 2.0, JPEG, DDR/DDR2 and SDRAM nterfaces ideally suited for digital cameras, digital video cameras and other such mobile terminals, the CB-55L is perfect for system development of low-power-consumption mobile terminals.

Basic Specification

Series Name CB-55L (1.0V) CB-55L (1.2V) Product name µPD811xxx Technology 55 nm CMOS process Power supply voltage Internal 1.0±0.1 V 1.2±0.1 V I/O block 3.3±0.3 V or 2.5±0.2 V or 1.8±0.15 V Mountable gates (minimum step)*1 5 M gates Mountable gates (maximum step)*1 100 M gates Maximum system frequency 233 MHz 450 MHz Power consumption*2 1.0 nW/MHz/gates 1.4 nW/MHz/gates Memory (capacity) 1-port SRAM 2 to 128 bits, 16 words to 16 K words 2-port (1R+1W) SRAM 2 to 128 bits, 32 words to 4 K words 2-port (1RW+1RW) SRAM 2 to 128 bits, 16 words to 8 K words ROM 2 to 128 bits, 128 words to 8 K words Package FPBGA, PBGA, FCBGA

Note(*)

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