PARAMETRIC
ADVANCED

Hard Disks

Hard disks used as memory for personal computers have been expanding in capacity by leaps and bounds, and are now being employed in a wider range of applications, including mounting on DVD recorders.
NEC Electronics offers a line-up of MOSFET products suitable for hard disk power supplies, contributing to lower power consumption.
Specifically, we supply a series of products with MOSFET + SBD in one package suitable for DC/DC converter circuits that generate various voltages, ranging from 5V power supply voltage fed to hard disks and 1.2-3.3 V for internal dedicated LSIs, to negative voltage, as well as MOSFET products for series regulator circuits.
NEC Electronics offers the NSAD and NNCD series as ESD protective devices for the external interfaces of hard disks. In particular, the NSAD series features low terminal capacitance suitable for use in high-speed interfaces, and provides ESD protection that does not affect high-speed data transfer.

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Circuit Diagram

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Power Supply Circuit Devices
For DC/DC Converter Circuits

MOSFET with Schottky Barrier Diode

Type No.	Package	MOSEFT									SBD
		Polarity	VDSS [V]	VGSS [V]	ID (DC) [A]	Ron1 (mohm) typ /max. at 4.5V	Ron2 (mohm) typ /max. at 2.5V	Ron3 (mohm) typ /max. at 1.8V	Ciss (pF) typ	QG (nC) typ	VR RM (V)	IF (AV) (A)	VF (V) max	IR (uA) max
μPA507	SC-95 5pin	Pch	-20	±8	±2	68/85	84/120	109/180	380	4.7	30	1	0.38 at 1A	200 at 10V
μPA508	SC-95 5pin	Nch	+20	±12	±2	40/51	59/90	-	170	2.7
μPA1980	SC-95	Pch	-20	±8	±2	116/135	142/183	170/284	272	2.3	40	0.5	0.51 at 0.5A	20 at 40V

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For Series Regulator Circuits

Package : 6pWSOF

Polarity	Type No.	Config	VDSS (V)	VGSS (V)	ID (DC) (A)	Ron1 (mohm) typ/max at1.8V	Ron2 (mohm) typ/max at2.5V	Ron3 (mohm) typ/max at4.5V	Ron4 (mohm) typ/max at10V	Ciss (pF) typ	QG (nC) typ
Nch	μPA620TT	Single	20	±12	±5.0	-	40/54	30/38	-	450	5.5
	μPA621TT	Single	20	±12	±5.0	-	59/79	40/50	-	270	3.3
Pch	μPA650TT	Single	-12	±8	±5.0	68/114	51/68	40/50	-	610	5.5
	μPA651TT	Single	-20	±8	±5.0	85/142	66/88	55/69	-	600	5.5
	μPA652TT	Single	-20	±12	±2.0	-	385/514	235/294	-	126	1.0

Package : 8LD3x2MLPM

Polarity Type No. Config VDSS (V) VGSS (V) ID(DC) (A) PT (W) # Ron1 (mOhm) typ/max at 1.8V Ron2 (mOhm) typ/max at 2.5V Ron3 (mOhm) typ/max at 4.5V Ciss (pF) typ QG (nC) typ Pch μPA2610T1C Single -20 ± 8 ± 5 1.9 85/142 66/88 55/69 600 5.5

#Mounted on Fr-4 board PW < 10sec

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ESD Protective Devices
NNCD:NEC Noise Clipping Diode

		Low Capacitance			Low Capacitance High ESD
Power		200mW			200mW
ESD		8kVmin.			30kVmin.
Ct		10pFtyp.			20pFtyp.
Series		NNCD[　]LG NNCD[　]RG	NNCD[　]LH NNCD[　]RH	NNCD[　]RL	NNCD[　]MF	NNCD[　]MG
VBR	5.6V	NNCD5.6LG	NNCD5.6LH	-	-	NNCD5.6MG
	6.2V	NNCD6.2LG	NNCD6.2LH	-	NNCD6.2MF	NNCD6.2MG
	6.8V	NNCD6.8RG	NNCD6.8RH	NNCD6.8RL	-	NNCD6.8MG
Package		SC-74A (Quad)	SC-88A (Quad)	5pin×SOF (Quad)	SC-59 (Dual)	SC-74A (Quad)

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Surge Absorber Devices for ESD Protection(NSAD series)

Part number	NSAD500F	NSAD500S	NSAD500H
Elements	2 diodes	2 diodes	4 diodes
Package	SC-59 (Dual)	SC-70 (Dual)	SC-88A (Quad)

Maximum rating (TA=25 °C)

Item	Symbol	Rating	Unit	Remark
Power dissipation	P	200 (S-type:150)	mW	total
Junction temperature	Tj	150	°C	-
Strage temperature	Tstg	-55～ +150	°C	-

Electrical characteristics (TA=25 °C (A to K1, K2, K3, K4))

Break over Voltage VBO (V)		Capacitance Ct (pF)		Reverse current IF (uA)		ESD [*1] (kV)		<Reference> Forward Break over Voltage
Min	TYP	TYP	condition	MAX	VF(V)	MIN	Condition
5.3	8	3.5	VR=0V f=1MHz	0.1	3.0	8	C=150pF R=330Ω Contact discharge	10V TYP

[*1] Based upon with IEC 61000-4-2.

Introduction to Key Devices