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Body control modules


A body control module integrates functions such as door locks and lights.

Body control requires in-vehicle communication via the CAN or LIN bus, memory or package expansion according to delivery destination and vehicle type, low-EMI characteristics for
handling noise interference, and low power consumption for
suppressing battery consumption when ignition is off.

Our 32-bit microcontrollers for automotive applications satisfy these demands.

Our intelligent power devices (IPDs)are also suitable for drive control of in-vehicle devices. An IPD is an invehicle power device that integrates a power MOSFET, protection circuit, and
monitor output in one package and can be used to reduce the size and weight and improve the reliability of in-vehicle devices.

* CAN : Controller Area Network
* LIN : Local Interconnect Network

Body control modules



Functional block diagram of Body control modules

Functional block diagram of Body control modules


Recommended device

Microcontroller


Product Name/Alias Features
V850ES/Fx3 32-bit All Flash microcontroller: highly functional on-chip motor control timer, high-speed 32 or 48 MHz operation, CAN and LIN buses, 64 to 176 pins


Diode


Product Name/Alias Features
NNCD ⌈⌋DT,NNCD ⌈⌋ST ESD protection diode for CAN and LIN communication


Operational amplifier,comparator


Product Name/Alias Features
µPC1251 Single power supply, can be applied to in-vehicle management


IPD


Product Name/Alias Features
µPD166007 Low on-resistance: 10 mΩ, high-side switch: 1 channel
µPD166100 40V withstanding voltage, low-side switch: 1 channel
µPD166101 40V withstanding voltage, low-side switch: 2 channels
µPD166104 100V withstanding voltage, low-side switch: 2 channels


Power MOSFET NP Series


Product Name/Alias Features
NP52N06SLG VDSS = 60 V,ID(DC) = ± 52 A,RDS(ON) = 17.5 mΩ(MAX.),
package:TO-252
NP82N06PLG VDSS = 60 V,ID(DC) = ±82 A,RDS(ON) = 6.7 mΩ(MAX.),
package:TO-263
NP90N04VUG VDSS = 40 V,ID(DC) = ±90 A,RDS(ON) = 4.0 mΩ(MAX.),
package:TO-252
NP90N055VUG VDSS = 55 V,ID(DC) = ±90 A,RDS(ON) = 6.0 mΩ(MAX.),
package:TO-252
NP36P06SLG VDSS = - 60 V,ID(DC) = ±36 A,RDS(ON) = 30 mΩ(MAX.),
package:TO-252
NP83P06PDG VDSS = - 60 V,ID(DC) = ±83 A,RDS(ON) = 8.8 mΩ(MAX.),
package:TO-263


Power MOSFET P-ch + N-ch complementary


Product Name/Alias Features
µPA2793GR P-ch:VDSS = - 40 V,ID(DC) = ± 7 A,RDS(ON) = 26mΩ(MAX.),N-ch:VDSSS = 40 V,ID(DC) = ± 7 A,RDS(ON) = 15 mΩ(MAX.),
Power SOP8 package
µPA2794GR P-ch:VDSS = - 60 V,ID(DC) = ± 5.5 A,RDS(ON) = 43mΩ(MAX.),N-ch:VDSS = 60 V,ID(DC) = ± 5.5 A,RDS(ON) = 25mΩ(MAX.),
Power SOP8 package




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