|
Name of master
|
µPC5200
|
µPC5201
|
µPC5202
|
µPC5203
|
µPC5204
|
Remark
|
|
Process
|
High-speed, High-voltage bipolar/Process
|
Name: M-CHS
|
|
The maximum power supply voltage
|
44 V
|
Absolute maximum rating
|
|
Number of pads
|
24
|
28
|
40
|
52
|
62
|
|
|
Number of total elements
|
653
|
1029
|
1786
|
3087
|
4561
|
|
|
Number of total transistors
|
189
|
303
|
535
|
932
|
1382
|
|
NPN Transistor
|
HDT1
|
72
|
120
|
216
|
384
|
576
|
IC(MAX)= 1.0 mA*1
|
|
HTW4
|
9
|
15
|
27
|
48
|
72
|
IC(MAX)= 10 mA*1
|
|
HEW4
|
12
|
14
|
20
|
26
|
31
|
IC(MAX)= 10 mA*1
|
|
HTT5
|
12
|
14
|
20
|
26
|
31
|
IC(MAX)= 18 mA*2
|
PNP Transistor
|
HLP2
|
48
|
80
|
144
|
256
|
384
|
IC(MAX)= 0.12 mA*1 (Lateral type)
|
|
HLP2A
|
18
|
30
|
54
|
96
|
144
|
Row noise PNP IC(MAX)= 0.12 mA*1 (Lateral type)
|
|
HVP3
|
18
|
30
|
54
|
96
|
144
|
IC(MAX)= 1.0mA*1 (Vertical type)
|
|
Number of total resistance
|
456
|
712
|
1225
|
2108
|
3108
|
|
Ion implantation resistance
|
500 Ω
|
144
|
240
|
426
|
760
|
1144
|
Ion implantation resistance P+Resistance
|
|
10 kΩ
|
216
|
360
|
639
|
1140
|
1716
|
Ion implantation resistance P-Resistance
|
|
Polysilicon resistance
|
500 Ω
|
96
|
112
|
160
|
208
|
248
|
Polysilicon resistance N+Resistance
|
|
Number of capacitors (5 pF)
|
9
|
15
|
27
|
48
|
72
|
MOS Capacity
|